Effect of Silicon Nanowire on Crystalline Silicon Solar Cell Characteristics

Document Type : Research Paper

Authors

1 Electrical and Electronic Department, University of Sistan and Baluchestan, Zahedan, Iran

2 Mechanical Engineering Department, University of Sistan and Baluchestan, Zahedan, Iran

Abstract

Nanowires (NWs) are recently used in several sensor or actuator devices to improve their ordered characteristics. Silicon nanowire (Si NW) is one of the most attractive one-dimensional nanostructures semiconductors because of its unique electrical and optical properties. In this paper, silicon nanowire (Si NW), is synthesized and characterized for application in photovoltaic device. Si NWs are prepared using wet chemical etching method which is commonly used as a simple and low cost method for producing nanowires of the same substrate material. The process conditions are adjusted to find the best quality of Si NWs. Morphology of Si NWs is studied using a field emission scanning electron microscopic technique. An energy dispersive X-Ray analyzer is also used to provide elemental identification and quantitative compositional information. Subsequently, Schottky type solar cell samples are fabricated on Si and Si NWs using ITO and Ag contacts. The junction properties are calculated using I-V curves in dark condition and the solar cell I-V characteristics are obtained under incident of the standardized light of AM1.5. The results for the two mentioned Schottky solar cell samples are compared and discussed. An improvement in short circuit current and efficiency of Schottky solar cell is found when Si nanowires are employed.

Keywords

References

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Journal of Ultrafine Grained and Nanostructured Materials
Volume 49, Issue 1
June 2016
Pages 43-47

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History

  • Receive Date: 16 January 2016
  • Revise Date: 22 June 2016
  • Accept Date: 30 May 2016

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